Martino Rimoldi, Raimondo Cecchini, Claudia Wiemer, Alessio Lamperti, Emanuele Longo, Lucia Nasi, Laura Lazzarini, Roberto Mantovan and  Massimo Longo
RSC Advances, Issue 34, 2020,


Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb2Te3 films on Si(111).


* Electronic supplementary information (ESI) available: Additional SEM, AFM, and TEM images and characterization data. See DOI: 10.1039/d0ra02567d