Epitaxial HfTe2 Dirac semimetal in the 2D limit

Polychronis Tsipas, Panagiotis Pappas, Evgenia Symeonidou, Sotirios Fragkos, Christina Zacharaki, Evangelia Xenogiannopoulou, Nikitas Siannas, and Athanasios Dimoulas

APL Materials, Epitaxial HfTe2 Dirac semimetal in the 2D limit: APL Materials: Vol 9, No 10 (scitation.org)

ABSTRACT

One monolayer semimetallic HfTe₂ thin films are grown on three substrates with different electronic properties in order to study the substrate effect on the electronic structure of the HfTe₂ epilayer. Angle resolved photoelectron spectroscopy measurements indicate that the band features are identical in all three cases, providing evidence that the HfTe₂ epilayer does not interact with any of the substrates to form hybridized bands and any band feature originates from the HfTe₂ material itself. However, a shift of HfTe₂ energy bands is observed among the three cases, which is attributed to substrate electron doping. This paves the way for accessing the Dirac point of HfTe₂ Dirac semimetal, which is located about ∼0.2 to 0.3 eV above the Fermi level in the case of suspended HfTe₂ in a non-destructive way.

Epitaxial HfTe2 Dirac semimetal in the 2D limit: APL Materials: Vol 9, No 10 (scitation.org)